首页> 外文OA文献 >Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells
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Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

机译:水溶液中处理的硫氰酸铜(I)硫氰酸铜(CuSCN)空穴传输层及其在薄膜晶体管和高效有机和有机金属卤化物钙钛矿太阳能电池中的应用

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摘要

This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.
机译:这项研究报告了由氨水处理的硫氰酸铜(I)空穴传输层(HTL)的开发,作为传统的正烷基硫化物溶剂的新型替代品。当将CuSCN-氨基配合物水溶液在空气中旋铸并在100°C退火时,会形成宽带隙(3.4–3.9 eV)和超薄(3-5 nm)的CuSCN层。 X射线光电子能谱证实了所形成的CuSCN层具有很高的成分纯度,而高分辨率价带谱与第一性原理计算相符。使用场效应晶体管测量结果对空穴传输性质的研究表明,水处理的CuSCN层的空穴迁移率比用二乙基硫溶液处理的薄膜高出五倍,最大值接近0.1 cm2 V-1 s-1。另一个有趣的特性是所得CuSCN层的表面粗糙度低,在太阳能电池的情况下,这有助于使铟锡氧化物阳极平坦化。基于水处理的CuSCN HTL的有机体异质结和平面有机金属卤化物钙钛矿型太阳能电池的功率转换效率分别为10.7%和17.5%。重要的是,基于水处理的基于CuSCN的电池始终优于基于聚(3,4-乙撑二氧噻吩)聚苯乙烯磺酸盐HTL的器件。这是有关通过水基合成路线加工的CuSCN薄膜和装置的第一份报告,该路线与高通量制造兼容,并为进一步的发展铺平了道路。

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